Jiangsu MHCHXM has launched the TO-263M-2L ultra-thin packaged SiC MOSFET product, contributing to the development of the third-generation semiconductor.

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Mhchxm Electronics Technology was founded in 2005 and is a semiconductor company specializing in the research and development, production, and sales of power devices.

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Rectifier device Schottky diode High junction temperature Schottky diode Low forward voltage drop Schottky diode Low forward voltage drop and high junction temperature Schottky diode High current Schottky diode High voltage Schottky diode Fast recovery diode Ultrafast recovery diode Low forward voltage drop fast recovery diode 650V Fast recovery diode Rectifier diode
SiC devices SiC diode SiC MOSFET
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Mhchxm Electronics Technology was founded in 2005 and is a semiconductor company specializing in the research and development, production, and sales of power devices.

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Mhchxm Electronics Technology was founded in 2005 and is a semiconductor company specializing in the research and development, production, and sales of power devices.

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Mhchxm Electronics Technology was founded in 2005 and is a semiconductor company specializing in the research and development, production, and sales of power devices.

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Jiangsu MHCHXM has launched the TO-263M-2L ultra-thin packaged SiC MOSFET product, contributing to the development of the third-generation semiconductor.

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Product Introduction Jiangsu MHCHXM has launched a TO-263M-2L ultra-thin package form of third-generation semiconductor SiC MOSFET products with certain unique features. The TO-263M-2L ultra-thin package product is pin-compatible with the conventional TO-263-2L, but the thickness of its package molding compound is reduced by approximately 60% compared to the traditional TO-263. This package form product can meet industrial standards, with a moisture sensitivity level that can pass MSL-1. Compared with the conventional TO-277 and DFN packages, it can maximize the rated power, achieve a miniaturized and space-saving design, and meet the requirements of some products with relatively limited space but high power density.

The TO-263M-2L ultra-thin packaged SiC MOSFET products cover a voltage level of 650V, with on-resistance rated values ranging from 100mΩ to 540mΩ.

Product Features Low height (typical value: 1.7mm)
High heat dissipation
Pin compatible with TO-263-2L package
Improved efficiency
Industrial-grade products available
Compared with TO-277 and DFN packages, it can maximize the rated power, achieve miniaturization and space-saving design.
Compliant with ROHS, SVHC, halogen-free and other environmental protection requirements
Passed MSL-1 moisture sensitivity level

Product selection recommendation

碳化硅MOSFET (SiC MOSFET)

Part Number
Package
VDSS(V)
ID(A)
VGS(th)_Min (V)
VGS(th)_Max (V)
Rdson@VGS15V_TYP(
Rdson@VGS15V_Max(mΩ)
Rdson@VGS18V_TYP(mΩ)
Rdson@VGS18V_Max(mΩ)

HXMC65N100M3HXMC65N160M3HXMC65N300M3HXMC65N130M1HXMC65N190M1HXMC65N250M1HXMC65N380M1
TO-263M-2LTO-263M-2LTO-263M-2LTO-263M-2LTO-263M-2LTO-263M-2LTO-263M-2L
650650650650650650650
2817102016119.3
2.42.42.42.72.72.72.7
4444.54.54.54.5
130190380190260380580
200268530250330500720
100160300130190250380
150220420190220380550

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碳化硅MOSFET (SiC MOSFET)

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